GaAs (001) surface balanced with arsine partial pressure in metalorganic chemical vapor deposition reactor observed by surface photoabsorption
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 22-27
- https://doi.org/10.1016/0022-0248(94)91024-3
Abstract
No abstract availableKeywords
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