Resonant Optical Second Harmonic Generation at the Steps of Vicinal Si(001)
- 7 August 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 75 (6) , 1138-1141
- https://doi.org/10.1103/physrevlett.75.1138
Abstract
Resonant optical second harmonic generation from vicinal Si(001) and Si(001)-Sb around 3.3 eV is shown to be dominated by electronic states associated with reconstruction of the surface step. The mirror plane perpendicular to the step edge, which is present in the macroscopic surface and in the bulk and terrace crystallographic structures, is absent in the resonant second harmonic response from vicinal Si(001)-( )-Sb.
Keywords
This publication has 21 references indexed in Scilit:
- Identification of strained silicon layers at Si-interfaces and clean Si surfaces by nonlinear optical spectroscopyPhysical Review Letters, 1993
- Si(100)1×1-Sb and Si(100)2×1-Sb surfaces studied with angle-resolved photoemission and surface differential reflectivityPhysical Review B, 1993
- /Si interfacial structure on vicinal Si(100) studied with second-harmonic generationPhysical Review B, 1993
- Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-SbPhysical Review Letters, 1990
- Epioptics: linear and non-linear optical spectroscopy of surfaces and interfacesJournal of Physics: Condensed Matter, 1990
- Surface properties probed by second-harmonic and sum-frequency generationNature, 1989
- Second harmonic generation studies of interfacial structure and dynamicsProgress in Surface Science, 1988
- Tunneling images of biatomic steps on Si(001)Physical Review Letters, 1987
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980