Time-resolved measurement of hole sweepout in a GaAs photoconductor
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 87-89
- https://doi.org/10.1063/1.94563
Abstract
A nonlinear luminescence technique is used to measure hole sweepout in a GaAs photoconductor at room temperature. The measured sweepout time for an applied field of 20 kV/cm corresponds to an average hole velocity of 2.0×106 cm/s. A simple model for extracting the photoexcited population decay from the experimental data is described.Keywords
This publication has 11 references indexed in Scilit:
- Nonlinear luminescence and time-resolved diffusion profiles of photoexcited carriers in semiconductorsApplied Physics Letters, 1982
- Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time-resolved optical picosecond reflectivityApplied Physics Letters, 1982
- Time resolved luminescence of photoexcited p-type gallium arsenide by population mixingApplied Physics Letters, 1981
- Picosecond correlation effects in the hot luminescence of GaAsJournal of Luminescence, 1981
- A photoconductive detector for high-speed fiber communicationIEEE Transactions on Electron Devices, 1981
- Picosecond nonequilibrium carrier transport in GaAsApplied Physics Letters, 1981
- Spontaneous luminescence due to high density electron-hole plasma in GaAs under nano- and pico-second pulse excitationSolid State Communications, 1980
- Dynamics of hot carrier cooling in photo-excited GaAsSolid State Communications, 1979
- Picosecond time resolved reflectivity of direct gap semiconductorsSolid State Communications, 1978
- Time-resolved luminescence spectra in highly photo-excited CdSe at 1.8KSolid State Communications, 1978