GaAs/GaAs1−ySby superlattice light emitting diodes
- 15 May 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3843-3845
- https://doi.org/10.1063/1.332894
Abstract
We present the first report of light emitting diodes fabricated with GaAs/GaAs1−ySby superlattice active regions. Several device structures are investigated, including devices with and without AlxGa1−xAs confining layers. Preliminary measurements indicate peak optical intensities may be obtained at wavelengths near 1 μm, with an associated full width at half maximum ∼100 meV at 300 K. Room temperature forward I‐V characteristics indicate an ideality factor of approximately two for these devices. Quantum efficiencies of ∼0.1% have been obtained for continuous operation.This publication has 9 references indexed in Scilit:
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