Influence of nitrogen and temperature on the deposition of tetrahedrally bonded amorphous carbon

The effect of nitrogen addition on the properties of tetrahedral amorphous carbon (ta-C) has been studied. The ta-C is deposited by a filtered cathodic vacuum arc. The effect of introducing nitrogen on its plasma was measured by a retarding field analyzer and optical emission spectroscopy. The ta-C:N films were studied as a function of nitrogen content, ion energy, and deposition temperature. The incorporation of nitrogen was measured over the range of ${10}^{\text{−2}}\text{–10\hspace{0.05em}}\mathrm{at}\mathrm{. \%}$ by secondary ion mass spectrometry and elastic recoil detection analysis. The N content was found to vary slightly sublinearly with the ${\mathrm{N}}_{\mathrm{2}}$ partial pressure during deposition. A doping regime was found for N contents of up to 0.4 at. %, in which the conductivity changes while the ${\mathrm{sp}}^3$ content and the optical band gap remain constant. For 0.4%–8% N, the ${\mathrm{sp}}^3$ fraction remains above 80% but the optical gap closes due to a clustering of ${\mathrm{sp}}^2$ sites. Only above about 10% N, the ${\mathrm{sp}}^3$ fraction falls. The influence of nitrogen on the $\mathrm{a-}\mathrm{C}$ was found to be independent of ion energies between 20 and 220 eV. Deposition above 200 °C causes a sudden loss of ${\mathrm{sp}}^3$ bonding. Raman and optical gap data show however that existing ${\mathrm{sp}}^2$ sites begin to cluster below this temperature.