Tetrahedrally bonded amorphous carbon (ta-C) thinfilm transistors
- 29 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (5) , 498-499
- https://doi.org/10.1049/el:19960288
Abstract
The authors describe a glass compatible, carbon-based, metal-insulator- semiconductor field effect transistor (MISFET). Tetrahedral amorphous carbon (ta-C) is used, for the first time, as the active semiconductor layer in a coplanar thin film transistor (TFT) structure.Keywords
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