SIMOX Research, development, and manufacturing

This publication has 12 references indexed in Scilit:

• A model for high-field conduction in SIMOX buried oxides
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A bootstrapped bipolar CMOS (B/sup 2/CMOS) Gate for low-voltage applications
  IEEE Journal of Solid-State Circuits, 1995
• An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology
  IEEE Journal of Solid-State Circuits, 1994
• Electrical and structural characteristics of thin buried oxides
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
• Formation and stability of continuous buried SiO2 layers in SIMOX
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
• 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer
  IEEE Transactions on Electron Devices, 1993
• Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region
  Journal of Materials Research, 1993
• Development of second generation oxygen implanter
  Materials Science and Engineering: B, 1992
• Modes of operation and radiation sensitivity of ultrathin SOI transistors
  IEEE Transactions on Electron Devices, 1990
• C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
  Electronics Letters, 1978