Nano-Sized Structures on Atomically-Flat Semiconductor and Metal Surfaces, Formed by Chemical and Electrochemical Methods
Open Access
- 5 July 2000
- journal article
- Published by The Electrochemical Society of Japan in Electrochemistry
- Vol. 68 (7) , 556-561
- https://doi.org/10.5796/electrochemistry.68.556
Abstract
The self-organizing abilities of molecular and nano-sized systems have been explored to form ordered nano-sized structures. Some germinant unique examples of such nano-structures, produced by chemical and electrochemical methods, are reviewed. The first example is formation of nano-holes at atomically flat, H-terminated n-Si (111) surfaces, which occurs during electrochemical deposition of Pt. Reductive dissolution of the Si surface, catalyzed by Pt in a mono-atomic state as a reaction intermediate of the Pt deposition, is proposed as a plausible mechanism. The second example is formation of ordered iodine nano-rods on atomically flat, H-terminated n-Si (111) surfaces, which occurs upon their immersion in 7.1 M HI. The formation of iodine nano-rods was closely related with that of Si-iodine termination bonds. The third example is formation of ordered arrays of gold nano-particles in aqueous solutions and on gold (111) surfaces, which occurs by addition of organic thiols to particle solutions. The aspect ratio of the ordered arrays depended on the kind of thiols added. These examples strongly suggest that the chemical and electrochemical methods are a promising approach to production of ordered nano-structures on solid surfaces.Keywords
This publication has 26 references indexed in Scilit:
- Electrochemical metal deposition on atomically nearly-flat silicon surfaces accompanied by nano-hole formationElectrochimica Acta, 1999
- Ethological Remarks on MannerismsPsychopathology, 1998
- Hydrogen Exchange Reaction on Hydrogen‐Terminated (100) Si Surface during Storage in WaterJournal of the Electrochemical Society, 1998
- A Comparative Electrochemical Study of Copper Deposition onto Silicon from Dilute and Buffered Hydrofluoric AcidsJournal of the Electrochemical Society, 1998
- Electrochemical and Radiochemical Study of Copper Contamination Mechanism from HF Solutions onto Silicon SubstratesJournal of the Electrochemical Society, 1997
- Modulation of Flat-band Potential and Increase in Photovoltage for n-Si Electrodes by Formation of Halogen Atom Terminated Surface BondsChemistry Letters, 1997
- Electrons in artificial atomsNature, 1996
- Formation and Structure of Self-Assembled MonolayersChemical Reviews, 1996
- Self-Organization of CdSe Nanocrystallites into Three-Dimensional Quantum Dot SuperlatticesScience, 1995
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989