Depletion of interstitial oxygen in silicon and the thermal donor model
- 15 August 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1287-1289
- https://doi.org/10.1063/1.339683
Abstract
Recent experimental studies which monitor the loss of oxygen interstitials during 450 °C annealing of Czochralski silicon have been argued to be in conflict with the predictions of existing thermal donor (TD) kinetic models. In this paper we show that a recently proposed model predicts an oxygen depletion rate which is in excellent agreement with the experimental findings.This publication has 9 references indexed in Scilit:
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