High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
- 17 June 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- An over 200-W output power GaN HEMT push-pull amplifier with high reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- 179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plateElectronics Letters, 2004
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- 10-W/mm AlGaN-GaN HFET with a field modulating plateIEEE Electron Device Letters, 2003
- Gallium nitride (GaN) HEMT's: progress and potential for commercial applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- SiC and GaN transistors - is there one winner for microwave power applications?Proceedings of the IEEE, 2002
- The toughest transistor yet [GaN transistors]IEEE Spectrum, 2002
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Undoped AlGaN/GaN HEMTs for microwave power amplificationIEEE Transactions on Electron Devices, 2001