The density profile of implanted 3He measured by means of the 3He(d,p)4He nuclear reaction
- 1 March 1975
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 124 (2) , 573-577
- https://doi.org/10.1016/0029-554x(75)90612-6
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Studies of the mobility of helium in vanadiumJournal of Nuclear Materials, 1974
- Detectability limits for boron and phosphorus in silicon by Auger electron spectroscopy (AES)Surface Science, 1974
- Depth distribution of implanted helium and other low-z elements in metal films using proton backscatteringApplied Physics Letters, 1973
- Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometryApplied Physics Letters, 1973
- Rapid profile measurements in ion implanted siliconJournal of Physics E: Scientific Instruments, 1972
- Observations of arsenic atoms in silicon crystals by use of helium ion scatteringPhysica Status Solidi (a), 1971
- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- The ranges of 5-80 keV deuterium ions in gold and aluminiumCanadian Journal of Physics, 1968
- The application of diffusion theory to inert-gas motion in ion-bombarded solids: Diffusion theory for discrete media, part IIIJournal of Nuclear Materials, 1966