AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
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- 22 July 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (4) , 604-606
- https://doi.org/10.1063/1.1494858
Abstract
We report on an approach of using AlN/AlGaN superlattices(SLs) for threading-dislocation-density reduction to grow high quality thick AlGaN on sapphire. Using x-ray diffraction(XRD) measurements and etch pits counting by atomic force microscopy, we show that the insertion of AlN/AlGaN SLs suppresses the material mosaicity and decreases the threading dislocation density by two orders of magnitude, and then eliminates cracking. Dislocation densities deduced from the XRD results and those from chemical etching are in a good agreement.Keywords
This publication has 18 references indexed in Scilit:
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain managementApplied Physics Letters, 2002
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nmJapanese Journal of Applied Physics, 2002
- Critical issues in Al Ga1−N growthOptical Materials, 2002
- The influences of AlxGa1−xN layer on the characteristics of UV LED structureJournal of Crystal Growth, 2001
- X-ray diffraction analysis of the defect structure in epitaxial GaNApplied Physics Letters, 2000
- Microscopic Investigation of Al0.43Ga0.57N on SapphireJapanese Journal of Applied Physics, 1999
- A high-resolution multiple-crystal multiple-reflection diffractometerJournal of Applied Crystallography, 1989
- Comparison of dislocation densities of primary and secondary recrystallization grains of Si-FeActa Metallurgica, 1957
- The estimation of dislocation densities in metals from X-ray dataActa Metallurgica, 1953
- X-ray line broadening from filed aluminium and wolframActa Metallurgica, 1953