The influences of AlxGa1−xN layer on the characteristics of UV LED structure
- 1 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 226 (2-3) , 215-222
- https://doi.org/10.1016/s0022-0248(01)01386-0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysisApplied Physics Letters, 1999
- Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxyApplied Physics Letters, 1999
- Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistorsApplied Physics Letters, 1998
- Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometryApplied Physics Letters, 1998
- Growth of epitaxial AlxGa1−xN films by pulsed laser depositionApplied Physics Letters, 1998
- Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 KApplied Physics Letters, 1996
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995