Hetero-epitaxial growth of CeO2 film on GaAs(001) substrate by laser molecular beam epitaxy
- 1 April 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 118 (3-4) , 299-303
- https://doi.org/10.1016/0022-0248(92)90075-t
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- Characterization of epitaxial yttria-stabilized zirconia/Si interface by ion beam channelingJournal of Applied Physics, 1991
- Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum systemApplied Physics Letters, 1991
- Reactions at the interfaces of thin films of Y-Ba-Cu- and Zr-oxides with Si substratesJournal of Applied Physics, 1991
- Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser depositionJournal of Applied Physics, 1990
- Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser depositionApplied Physics Letters, 1990
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990
- Interfacial Structure in Heteroepitaxial Silicon on SapphireJournal of the American Ceramic Society, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990
- Strain measurements in heteroepitaxial yttria-stabilized zirconia on Si by ion beam channelingJournal of Applied Physics, 1990
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989