Characterization of epitaxial yttria-stabilized zirconia/Si interface by ion beam channeling
- 15 June 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (12) , 8130-8132
- https://doi.org/10.1063/1.347465
Abstract
Yttria-stabilized zirconia (YSZ) films which have high crystalline quality and no dislocation near the YSZ/Si interface, have been epitaxially grown on Si(100) in spite of the relatively large lattice mismatch between YSZ and Si. The formation of the SiO2 layer at the YSZ/Si interface during the YSZ deposition takes an important part as a buffer layer in the epitaxial growth of YSZ films on Si.This publication has 9 references indexed in Scilit:
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989
- Evaluation of crystalline quality of heteroepitaxial yttria-stabilized zirconia films on silicon by means of ion beam channelingJournal of Applied Physics, 1989
- Electrical characteristics of metal-insulator-semiconductor diodes with ZrO2/SiO2 dielectric filmsJournal of Applied Physics, 1989
- Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter depositionApplied Physics Letters, 1988
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on SiliconJapanese Journal of Applied Physics, 1988
- Epitaxial Growth of Ba2YCu3Ox Thin Film on Epitaxial ZrO2/Si(100)Japanese Journal of Applied Physics, 1988
- Study of thermally oxidized yttrium films on siliconApplied Physics Letters, 1987
- Growth of crystalline zirconium dioxide films on siliconJournal of Applied Physics, 1985
- Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substratesApplied Physics Letters, 1983