Strain measurements in heteroepitaxial yttria-stabilized zirconia on Si by ion beam channeling

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Abstract
Yttria-stabilized zirconia (YSZ) films have been epitaxially grown on Si(100) substrates at 800 °C by vacuum evaporation. By post-annealing in dry O2 at 800 °C, SiO2 layer was formed at the YSZ/Si interface. Strain in heteroepitaxial cubic YSZ films has been measured by ion beam channeling. The strain was found to be tensile. This tensile strain is caused as the sample is cooled down after growth due to the difference in thermal expansion coefficients between YSZ and Si. The tensile strain is increased by annealing in dry O2, due to the SiO2 layer formed at the YSZ/Si interface. The tensile strain is also introduced in the near-interface region of Si substrate under SiO2.