Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n+ diodes
- 13 February 2001
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 117 (9) , 549-553
- https://doi.org/10.1016/s0038-1098(00)00513-5
Abstract
No abstract availableKeywords
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