Studies of Au-GaAs (001) interfaces prepared by molecular beam epitaxy. I. Overlayer growth and Schottky barrier formation

Publisher Website
Google Scholar
Abstract
Evolution of Au-GaAs (001) interface structures with increasing Au exposure was studied. This study utilized photoelectron spectroscopy, electron diffraction, and He-ion Rutherford backscattering spectrometry. This was accomplished with the aid of molecular-beam epitaxy for surface preparation. The thermal stability of Au-GaAs (001) interfaces are presented in the following paper [N. Watanabe, K. L. I. Kobayashi, T. Narusawa, and H. Nakashima, J. Appl. Phys. 58, 3766 (1985)]. New phenomena were observed on overlayer growth, electronic structure change, and Schottky barrier formation. The present results apparently differ from previous Au-GaAs (110) system results; however, they support the surface defect model for Schottky barrier formation by W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye [Phys. Rev. Lett. 44, 420 (1980)].