Resonant Raman scattering on localized states due to disorder inGaAs1−xPxalloys

Resonant Raman scattering (RRS) and resonant photoluminescence (RPL) studies on localized exciton states due to disorder in indirect-band-gap ${\mathrm{GaAs}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{P}}_{\mathrm{x}}$ alloys show that the RRS and RPL intensity is dominated by competition between radiative recombination at rate $W_R$ and the energy transfer mechanism of excitons between states of the localization tail. The rate of change of the transfer probability d[ln($W_{\mathrm{tr}\left)\right]/\mathrm{dE}}$ has been evaluated near the point where $W_{\mathrm{tr}=W_R}$.