Site symmetry of theEL2center in GaAs
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (17) , 9383-9386
- https://doi.org/10.1103/physrevb.35.9383
Abstract
A study has been made of the effects of uniaxial stress on the photocapacitance quenching phenomenon associated with the EL2 center in GaAs. The results show directly that the defect is a complex with (trigonal) site symmetry. The internal optical excitation assigned to the EL2 center is shown not to be directly related to the photoquenching transition. The implications of these results with respect to models of EL2 and its photoquenching mechanism are discussed.
Keywords
This publication has 21 references indexed in Scilit:
- Stability of thecenter in GaAs under electron-hole recombination conditionsPhysical Review B, 1986
- Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of2?Physical Review Letters, 1985
- Identification of the 0.82-eV Electron Trap,in GaAs, as an Isolated Antisite Arsenic DefectPhysical Review Letters, 1985
- AsGaantisites and their relation to EL2 defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAsPhysical Review Letters, 1984
- Identification of EL2 in GaAs as the AsGaantisite centreJournal of Physics C: Solid State Physics, 1984
- Optical Properties of As-Antisite andDefects in GaAsPhysical Review Letters, 1984
- Charge-state-controlled structural relaxation of thecenter in GaAsPhysical Review B, 1983
- AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAsJapanese Journal of Applied Physics, 1983
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982