Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor deposition on V-grooved substrates
- 13 June 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (24) , 3299-3301
- https://doi.org/10.1063/1.111972
Abstract
We report the fabrication of GaAs/AlAs multiple trench-buried quantum wires (TBWs) by metalorganic chemical vapor deposition on V-grooved substrates. The shape of AlAs layers grown on the V-grooves can be changed significantly from a V-shape to U-shape by varying growth temperatures and group-V/III ratios. 30-nm-wide and 100-nm-deep AlAs trenches with nearly vertical sidewalls are formed at the growth temperature of 650 °C with the group-V/III ratio of 165, while V-shaped AlAs grooves are formed at 700 °C with the V/III ratio of 110. Vertically stacked double TBWs are formed using the 30-nm-wide trenches. The low-temperature (15 K) photoluminescence spectrum for the double TBWs shows two distinct emission peaks corresponding to the 6.5- and 8.0-nm-thick wires.Keywords
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