Local transport and trapping issues in Al2O3 gate oxide structures
- 15 May 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (20) , 2886-2888
- https://doi.org/10.1063/1.126506
Abstract
The bias dependence of interfacial barriers in -based metal–oxide–semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between and Si of 2.78 eV was obtained. Electron trapping into levels that overlap the Si band gap and are located near the interface led to charge densities of
Keywords
This publication has 16 references indexed in Scilit:
- High-resolution depth profiling in ultrathin Al2O3 films on SiApplied Physics Letters, 2000
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000
- Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Atomic-scale studies of electron transport through MOS structuresApplied Surface Science, 1998
- Ultimate limit for defect generation in ultra-thin silicon dioxideApplied Physics Letters, 1997
- Investigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- CMOS scaling into the nanometer regimeProceedings of the IEEE, 1997
- Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealingJournal of Applied Physics, 1974