Structure and mechanical properties of r.f. sputtered SiC films
- 1 February 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 31 (3) , 235-241
- https://doi.org/10.1016/0040-6090(76)90370-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Formation of 2H-Type SiC Films by Reactive SputteringJapanese Journal of Applied Physics, 1972
- LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITIONApplied Physics Letters, 1970
- THE GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICONApplied Physics Letters, 1967
- Mass-Spectrometric Study of Sputtering of Single Crystals of GaAs by Low-Energy A IonsJournal of Applied Physics, 1967
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- Energy Distribution of Sputtered Cu AtomsJournal of Applied Physics, 1964