New Mechanism for Dislocation Blocking in Strained Layer Epitaxial Growth
- 31 January 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (5) , 947-950
- https://doi.org/10.1103/physrevlett.84.947
Abstract
Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long-range blocking of threading segments, we observe a new short-range mechanism which is significantly more effective. Simulations show that this reactive blocking occurs when two dislocations with the same Burgers vector reconnect.Keywords
This publication has 17 references indexed in Scilit:
- Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structuresJournal of Applied Physics, 1997
- Interaction of threading and misfit dislocations in a strained epitaxial layerApplied Physics Letters, 1996
- The kinetics of strain relaxation in lattice-mismatched semiconductor layersPhysica Status Solidi (a), 1994
- Changes in electrical device characteristics during the in situ formation of dislocationsApplied Physics Letters, 1993
- A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its pathJournal of Applied Physics, 1990
- Rapid variation in epilayer threading dislocation density near x = 0·4 in GexSi1−xon (100) SiPhilosophical Magazine Letters, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructuresJournal of Applied Physics, 1989
- Variation in misfit dislocation behavior as a function of strain in the GeSi/Si systemApplied Physics Letters, 1989
- Work hardening and strain relaxation in strained-layer buffersApplied Physics Letters, 1988