Degradation Behavior of Optoelectronic Devices
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasersApplied Physics Letters, 1982
- Deep-level changes in (Al,Ga)As double-heterostructure lasers degraded during accelerated aging at high temperaturesApplied Physics Letters, 1980
- Slow Degradation Mechanism of GaAlAs Light-Emitting DiodesJapanese Journal of Applied Physics, 1980
- Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescenceJournal of Applied Physics, 1979
- Heterostructure LasersJournal of the Electrochemical Society, 1979
- Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasersJournal of Electronic Materials, 1979
- Degradation sources in GaAs-AlGaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Degradation mechanism of (Al · Ga)As double-heterostructure laser diodesApplied Physics Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973