Spatial correlations of remote impurity charges: Mechanism responsible for the high mobility of a two-dimensional electron gas
- 15 July 1994
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (4) , 2723-2726
- https://doi.org/10.1103/physrevb.50.2723
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Coulomb barrier to tunneling between parallel two-dimensional electron systemsPhysical Review Letters, 1992
- Solid-hexatic-liquid phases in two-dimensional charge-density wavesPhysical Review Letters, 1992
- Effect of spatial correlation of DX centers on the mobility in heavily doped n-type GaAsApplied Physics Letters, 1992
- Coulomb gap and transport in classical electron liquidPhysical Review Letters, 1992
- Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centresSemiconductor Science and Technology, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- Pressure dependence of D X center mobility in highly doped GaAsApplied Physics Letters, 1989
- Energetics ofDX-center formation in GaAs andAs alloysPhysical Review B, 1989
- Theory of the Atomic and Electronic Structure ofCenters in GaAs andAlloysPhysical Review Letters, 1988
- Properties of the electron glassPhysical Review B, 1984