A HgCdTe/CdTe/GaAs/Si Epitaxial Structure
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAsApplied Physics Letters, 1986
- Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuitsApplied Physics Letters, 1985
- Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxyApplied Physics Letters, 1985
- Optical properties of GaAs on (100) Si using molecular beam epitaxyApplied Physics Letters, 1984
- Growth of CdTe films on silicon by molecular beam epitaxyJournal of Applied Physics, 1983
- Epitaxial growth and structure of films of CdTe evaporated in vacuum on to siliconPhysica Status Solidi (a), 1974