Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A) , L1161
- https://doi.org/10.1143/jjap.26.l1161
Abstract
High quality InGaAsP layers could be grown for a short growth period, even if the growth was performed inside the immiscible region. When a quaternary solution was prepared for the growth of InGaAsP/GaAs (111)A with E g ∼1.7 eV (77 K), a good layer with narrow PL half width was grown for a growth time shorter than 5 min. This is attributed to the stabilization of the growth by the strain energy induced by the lattice mismatch. A layer with large E g (∼1.8 eV at 77 K) and broad PL half width was precipitated for a growth time longer than 20 min due to the phase decomposition.Keywords
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