Capacitance Spectroscopy of Schottky Diodes Formed on Ion-Etched GaAs
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layerSolid-State Electronics, 1983
- Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriersSolid-State Electronics, 1973
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968