Chemical etching of silicon by CO2-laser-induced dissociation of NF3
- 1 May 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 46 (1) , 39-50
- https://doi.org/10.1007/bf00615136
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- A reinvestigation of the etch products of silicon and XeF2: Doping and pressure effectsJournal of Applied Physics, 1986
- Studies of atomic and molecular fluorine reactions on silicon surfacesApplied Physics Letters, 1986
- Soft X-ray photoemission study of the silicon-fluorine etching reactionSurface Science, 1986
- UV laser-generated fluorine atom etching of polycrystalline Si, Mo, and TiApplied Physics Letters, 1985
- Surface processes in plasma-assisted etching environmentsJournal of Vacuum Science & Technology B, 1983
- Reaction of atomic fluorine with silicon: The gas phase productsJournal of Applied Physics, 1982
- Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free RadicalsPublished by SPIE-Intl Soc Optical Eng ,1981
- The reaction of fluorine atoms with siliconJournal of Applied Physics, 1981
- Multiple photon excited SF6 interaction with silicon surfacesThe Journal of Chemical Physics, 1981
- Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on siliconJournal of Applied Physics, 1980