The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (3) , 125-127
- https://doi.org/10.1109/55.75732
Abstract
The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.Keywords
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