Growth of Al x Ga 1− x N and GaN on photo‐electrochemically patterned SiC substrates
- 24 November 2003
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 7,p. 2072-2076
- https://doi.org/10.1002/pssc.200303407
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layersJournal of Crystal Growth, 2002
- Lateral growth of AlxGa1–xN and GaN on SiC substrates patterned by photo-electrochemical etchingMRS Proceedings, 2002
- Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) SubstratesMRS Internet Journal of Nitride Semiconductor Research, 2001
- Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)Journal of Crystal Growth, 2000
- Low-dislocation-density GaN from a single growth on a textured substrateApplied Physics Letters, 2000
- Dislocation reduction in GaN thin films via lateral overgrowth from trenchesApplied Physics Letters, 1999
- Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor depositionJournal of Crystal Growth, 1998
- Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocationsApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997