Picosecond Photoinduced Absorption as a Probe of Metastable Light-Induced Defects in Intrinsic Hydrogenated Amorphous Silicon

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Abstract
We demonstrate that picosecond photoinduced absorption probes the diffusion-limited transport of electrons in the conduction-band tail for intrinsic hydrogenated amorphous silicon. We find that the median trapping time on this scale is controlled by the number of temperature- and intensity-dependent, metastable light-induced defects. We attribute the intensity dependence of the decay to quasimonomolecular recombination and/or the generation of transient, fast-annealing light-induced defects.