Ultrafast optoelectronic ferromagnetic semiconductor CdCr2Se4 switch
- 15 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (7) , 592-594
- https://doi.org/10.1063/1.99376
Abstract
A new ultrafast optoelectronic switch that utilizes the ferromagnetic semiconductor CdCr2Se4 is demonstrated to have a scope‐limited sampled response time of approximately 90 ps.Keywords
This publication has 13 references indexed in Scilit:
- Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FETIEEE Journal of Quantum Electronics, 1986
- Temperature dependence of the ultrafast photoluminescence kinetics from the magnetic semiconductors CdCr2Se4excited by femtosecond laser pulseIEEE Journal of Quantum Electronics, 1986
- Photoluminescent Determination of the Fundamental Gap for the Ferromagnetic Semiconductor CdPhysical Review Letters, 1981
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- An amorphous silicon photodetector for picosecond pulsesApplied Physics Letters, 1980
- High-speed InP optoelectronic switchApplied Physics Letters, 1979
- Picosecond optoelectronic switching in GaAsApplied Physics Letters, 1977
- FMR studies of Ag-doped CdCr2Se4Physics Letters A, 1968
- Electrical Transport Properties of the Insulating Ferromagnetic Spinels CdCr2S4 and CdCr2Se4Journal of Applied Physics, 1966