Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurements
- 1 July 1989
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 60 (1) , 73-78
- https://doi.org/10.1080/13642818908228815
Abstract
Interface defects in a-Si: H/a-Si3N4: H superlattices have been investigated by photothermal deflection spectroscopy measurements. In combination with results from electron spin resonance measurements, we conclude that most of the interface defects are not paramagnetic. We propose that defects other than neutral silicon dangling bonds are dominant at the interfaces.Keywords
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