4H-SiC avalanche photodiode with multistep junctionextensiontermination
- 16 August 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (17) , 1080-1081
- https://doi.org/10.1049/el:20010720
Abstract
4H-SiC avalanche photodiodes (APDs) are fabricated with a multistep junction termination extension. The leakage current density has been dramatically reduced to as low as 1 µA/cm2 and photo-responsivity up to 105 A/W has been achieved. The 4H-SiC APDs can run very stably at power densities up to 104 W/cm2.Keywords
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