Comparison of ultralow specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFET's

This publication has 10 references indexed in Scilit:

• A study on a high blocking voltage UMOS-FET with a double gate structure
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• The accumulation-mode field-effect transistor: a new ultralow on-resistance MOSFET
  IEEE Electron Device Letters, 1992
• Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures
  Journal of the Electrochemical Society, 1991
• Ultralow specific on resistance UMOSFET with trench contacts for source and body regions realised by selfaligned process
  Electronics Letters, 1991
• Trench DMOS transistor technology for high-current (100 A range) switching
  Solid-State Electronics, 1991
• Characteristics of trench j-MOS power transistors
  IEEE Electron Device Letters, 1989
• Numerical and experimental comparison of 60 V vertical double-diffused MOSFETs and MOSFETs with a trench-gate structure
  Solid-State Electronics, 1989
• TDMOS-an ultra-low on-resistance power transistor
  IEEE Transactions on Electron Devices, 1988
• Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm²
  IEEE Transactions on Electron Devices, 1987
• An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process
  IEEE Transactions on Electron Devices, 1987