Dark current-voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes
- 1 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (5) , 3481-3487
- https://doi.org/10.1063/1.359980
Abstract
The aim of this work is to provide the basis for the interpretation, under steady state and in the low‐voltage regime of the dark current‐density–voltage (J–V) characteristics of transverse asymmetric amorphous silicon (a‐Si:H) p‐i‐n and n‐i‐p diodes. The transverse asymmetric a‐Si:H diodes present ratios between the metal contact and the underneath doped layer areas larger than five, leading to the inclusion, in the diode equation, of a lateral leakage current, responsible for the high saturation current density and the forward shape of the J–V curves recorded. The leakage current depends on the lateral spatial potential developed with which varies following a power‐law dependence. The experimental J–V curves in diodes with the doped layer around the metal contact unetched and etched prove the role and origin of this lateral leakage current and, thus, the proposed model.This publication has 13 references indexed in Scilit:
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