Fluorinated Chemically Amplified Dissolution Inhibitors for 157 nm Nanolithography
- 1 January 2003
- journal article
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 16 (1) , 27-35
- https://doi.org/10.2494/photopolymer.16.27
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Metal-Catalyzed Addition Polymers for 157 nm Resist Applications. Synthesis and Polymerization of Partially Fluorinated, Ester-Functionalized Tricyclo[4.2.1.02,5]non-7-enesMacromolecules, 2003
- Designing a non-volatile imaging switch for mass-persistent, chemically amplified photolithography: a model studyChemical Communications, 2002
- Dissolution Inhibitors for 157 nm Lithography: A Progress Report.Journal of Photopolymer Science and Technology, 2002
- Design, Synthesis, and Characterization of Carbon-Rich Cyclopolymers for 193 nm MicrolithographyChemistry of Materials, 2001
- Novel Fluoropolymers for Use in 157nm Lithography.Journal of Photopolymer Science and Technology, 2001
- 157 nm resist materials: Progress reportJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Outlook for 157 nm resist designJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Lithographic Imaging Techniques for the Formation of Nanoscopic FeaturesChemical Reviews, 1999
- Lithography with 157 nm lasersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Chemical Amplification in High-Resolution Imaging SystemsAccounts of Chemical Research, 1994