Deposition of Tungsten Boride by Ion Beam Sputtering
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Ion beam sputtering deposition of tungsten: Energy and mass effects of primary ionsApplied Surface Science, 1989
- Influence of boron on WSi2 formation by direct reaction between tungsten and siliconApplied Surface Science, 1989
- Mechanisms for success or failure of diffusion barriers between aluminum and siliconJournal of Vacuum Science & Technology A, 1989
- Cosputtered W75C25 thin film diffusion barriersThin Solid Films, 1988
- WNx: Properties and applicationsThin Solid Films, 1987
- Formation of tungsten borides studied by field ion microscopyJournal of Vacuum Science & Technology A, 1987
- Influence of oxygen on the formation of refractory metal silicidesThin Solid Films, 1986
- Al/TiW reaction kinetics: Influence of Cu and interface oxidesJournal of Applied Physics, 1985
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- Diffusion barriers in thin filmsThin Solid Films, 1978