Growth-Temperature Dependence of the Quality of Al2O3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H2O2
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9B) , L1349
- https://doi.org/10.1143/jjap.32.l1349
Abstract
Dependence of the quality of thin films of Al2O3 on the growth temperature was investigated in the surface reaction limited growth system. It has been found that the density, the chemical bonding strength, and the electrical properties improve significantly with increasing growth temperature although the growth rate remains nearly constant. Also, Fourier transform infrared spectroscopy indicates that hydrogen incorporation into the films is nearly negligible.Keywords
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