Epitaxial growth of Ag films on InP (001) by atomic beam epitaxy in ultra-high vacuum
- 11 July 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (10) , L135-L138
- https://doi.org/10.1088/0022-3727/10/10/003
Abstract
The epitaxial growth of smooth, continuous Ag films on clean, characterised InP (001) surfaces at approximately=40 degrees C has been achieved by atomic beam epitaxy in ultra-high vacuum. Epitaxy on the P-stabilized, (001), C(2*8) reconstructed surface has been observed. The observed epitaxial relationship is consistent with published work on epitaxy of FCC metals on III-V compound semiconductors. Electrical measurements on the epitaxial Ag-InP contacts show that they are ohmic at 77 and 300K.Keywords
This publication has 10 references indexed in Scilit:
- The structure of silver contacts on indium phosphideThin Solid Films, 1977
- Molecular Beam Epitaxial Growth of InPJournal of the Electrochemical Society, 1977
- Bonding direction and surface-structure orientation on GaAs (001)Journal of Applied Physics, 1976
- InP microwave oscillations with 2-zone cathodesElectronics Letters, 1975
- Surface characterisation of indium phosphideSurface Science, 1975
- Surface states on phosphorus- and gallium-rich GaP(1̄1̄1̄)P surfaces in electron energy-loss spectroscopy and photoemissionSurface Science, 1975
- Stabilization of surfaces of III-V compound crystals by molecular beamsJournal of Physics D: Applied Physics, 1975
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- Comment on `Impact properties of carbon fibre composites'Journal of Physics D: Applied Physics, 1974
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973