Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC

This publication has 10 references indexed in Scilit:

• Recovery of close Frenkel pairs produced by low energy recoils in SiC
  Journal of Applied Physics, 2003
• Identification and Annealing of Common Intrinsic Defect Centers
  Materials Science Forum, 2003
• Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
  Materials Science Forum, 2003
• Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
  Journal of Applied Physics, 2003
• Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
  Journal of Applied Physics, 2002
• Empirical potential approach for defect properties in 3C-SiC
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002
• Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
• Proton Irradiation Induced Defects in 611- and 4H-SiC
  MRS Proceedings, 1998
• Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
• Study of copper precipitates in α‐iron by computer simulation I. Interatomic potentials and properties of Fe and Cu
  Philosophical Magazine A, 1995