Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 305-308
- https://doi.org/10.4028/www.scientific.net/msf.433-436.305
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Identification of carbon interstitials in electron-irradiated 6H-SiC by use of aenriched specimenPhysical Review B, 2002
- Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics studyPhysical Review B, 2002
- Native defect properties in β-SiC: Ab initio and empirical potential calculationsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
- Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence MicroscopyMaterials Science Forum, 2001
- Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron DiffusionMaterials Science Forum, 2000
- Optically active hydrogen dimers in crystalline siliconPhysical Review B, 1997