Bandfilling in liquid phase epitaxial InP-In1−xGaxP1−zAsz-InP quantum-well heterostructure lasers
- 1 November 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (11) , 5398-5403
- https://doi.org/10.1063/1.324495
Abstract
The bandfilling and gain behavior of thin (Lz∼400 Å) In1−xGaxP1−zAsz (x∼0.13, z∼0.29) layers imbedded in InP p‐n junctions, or on one side of the active region of regular quaternary double heterojunctions (x∼0.09, z∼0.20), are described. Bandfilling and spontaneous emission are observed from the quaternary quantum‐well band edge to the band edge of the InP confining layers (ΔEg∼245 meV, 77 K). Laser operation on confined‐particle transitions can be observed in the range 0<hν−Eg(InGaPAs) ≲ (2/3) ΔEg. The reduced gain of a quantum‐well heterostructure is demonstrated by comparison with the behavior of conventional quaternary double heterojunctions (active layer ≳0.1 μm) grown from the same set of LPE melts. To operate as lasers quantum‐well heterostructures are shown to require greater diode lengths and higher excitation currents, consistent with large bandfilling (in a thin layer) leading to a large spectral spread in the recombination radiation. These effects are demonstrated also on quaternary double heterojunctions of standard active‐layer thickness (≳0.1 μm) but modified with the inclusion of a quantum well on one side of the active region.This publication has 10 references indexed in Scilit:
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