Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (12) , 1598-1600
- https://doi.org/10.1109/68.896319
Abstract
We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 /spl mu/m and grown all-epitaxially in a single step on a GaAs substrate. Oxide-apertured devices demonstrated CW threshold currents as low as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices exhibited a pulsed threshold current density of 2-2.5 kA/cm/sup 2/ and slope efficiency above 0.09 W/A.Keywords
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