High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
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- 23 May 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (6) , 1139-1141
- https://doi.org/10.1109/lpt.2005.846948
Abstract
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.Keywords
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