InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain
Top Cited Papers
- 11 February 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4) , 729-736
- https://doi.org/10.1016/s0022-0248(02)02506-x
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial PerspectiveMRS Bulletin, 2002
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structuresIEEE Journal of Quantum Electronics, 2000
- GaAs-based long-wavelength lasersSemiconductor Science and Technology, 2000
- Low-threshold oxide-confined 1.3-μm quantum-dot laserIEEE Photonics Technology Letters, 2000
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substratesApplied Physics Letters, 1999
- Quantum dot resonant cavity light emitting diodeoperating near 1300 nmElectronics Letters, 1999
- Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substratesSemiconductors, 1999
- Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dotsApplied Physics Letters, 1998
- Prevention of gain saturation by multi-layer quantumdot lasersElectronics Letters, 1996