Low-threshold oxide-confined 1.3-μm quantum-dot laser
Top Cited Papers
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (3) , 230-232
- https://doi.org/10.1109/68.826897
Abstract
Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm 2 is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm 2 .Keywords
This publication has 14 references indexed in Scilit:
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mAIEEE Photonics Technology Letters, 1999
- Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum wellElectronics Letters, 1999
- 1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decompositionElectronics Letters, 1999
- Collisional broadening and shift of spectral lines in quantum dot lasersApplied Physics Letters, 1999
- Design parameters for lateral carrier confinement in quantum-dot lasersApplied Physics Letters, 1999
- Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dotsApplied Physics Letters, 1998
- Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxideIEEE Photonics Technology Letters, 1996
- Native-oxide-defined low-loss AlGaAs-GaAs planar waveguide bendsApplied Physics Letters, 1993
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990