The current understanding of epitaxial CVD silicon doping in the light of modelling and theory development (II). Theoretical foundations and incorporation equations
- 1 May 1987
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (5) , 669-676
- https://doi.org/10.1002/crat.2170220509
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Suppression of epitaxial silicon layer doping with boron in the presence of hydrogen chlorideCrystal Research and Technology, 1987
- Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD siliconCrystal Research and Technology, 1985
- Kinetics of the Incorporation of Dopants into Epitaxial CVD SiliconCrystal Research and Technology, 1982